october 2012 ?2012 fairchild semiconductor corporation FDMS86520 rev. c1 www.fairchildsemi.com 1 FDMS86520 n-channel powertrench ? mosfet FDMS86520 n-channel powertrench ? mosfet 60 v, 42 a, 7.4 m features ? max r ds(on) = 7.4 m at v gs = 10 v, i d = 14 a ? max r ds(on) = 10.3 m at v gs = 8 v, i d = 12.5 a ? advanced package and silicon combination for low r ds(on) and high efficiency ? next generation enhanced body diode technology, engineered for soft recovery ? msl1 robust package design ? 100% uil tested ? rohs compliant general description this n-channel mosfet has been designed specifically to improve the overall efficiency and to minimize switch node ringing of dc/dc converters us ing either synchronous or conventional switching pwm c ontrollers.it has been optimized for low gate charge, low r ds(on) , fast switching speed and body diode reverse recovery performance. applications ? primary dc-dc switch ? motor bridge switch ? synchronous rectifier power 56 d d d d g s s s pin 1 bottom top d d d d s s s g mosfet maximum ratings t a = 25 c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage 60 v v gs gate to source voltage 20 v i d drain current -continuous (package limited) t c = 25 c 42 a -continuous (silicon limited) t c = 25 c 74 -continuous t a = 25 c (note 1a) 14 -pulsed 80 e as single pulse avalanche energy (note 3) 86 mj p d power dissipation t c = 25 c 69 w power dissipation t a = 25 c (note 1a) 2.5 t j , t stg operating and storage junction temperature range -55 to +150 c r jc thermal resistance, junction to case 1.8 c/w r ja thermal resistance, junction to ambient (note 1a) 50 device marking device package reel size tape width quantity FDMS86520 FDMS86520 power 56 13 ?? 12 mm 3000 units
FDMS86520 n-channel powertrench ? mosfet www.fairchildsemi.com 2 ?2012 fairchild semiconductor corporation FDMS86520 rev. c1 electrical characteristics t j = 25 c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics symbol parameter test conditions min typ max units bv dss drain to source breakdown voltage i d = 250 a, v gs = 0 v 60 v bv dss t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c 30 mv/c i dss zero gate voltage drain current v ds = 48 v, v gs = 0 v 1 a i gss gate to source leakage current v gs = 20 v, v ds = 0 v 100 na v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 a 2.5 3.6 4.5 v v gs(th) t j gate to source threshold voltage temperature coefficient i d = 250 a, referenced to 25 c -11 mv/c r ds(on) static drain to source on resistance v gs = 10 v, i d = 14 a 6.0 7.4 m v gs = 8 v, i d = 12.5 a 7.3 10.3 v gs = 10 v, i d = 14 a, t j = 125 c 9 11 g fs forward transconductance v ds = 10 v, i d = 14 a 49 s c iss input capacitance v ds = 30 v, v gs = 0 v, f = 1 mhz 2140 2850 pf c oss output capacitance 624 830 pf c rss reverse transfer capacitance 24 40 pf r g gate resistance 0.1 0.7 2.1 t d(on) turn-on delay time v dd = 30 v, i d = 14 a, v gs = 10 v, r gen = 6 17 31 ns t r rise time 6.7 14 ns t d(off) turn-off delay time 20 32 ns t f fall time 410ns q g total gate charge v gs = 0 v to 10 v v dd = 30 v, i d = 14 a 28 40 nc q g total gate charge v gs = 0 v to 8 v 23 33 nc q gs gate to source charge 10.9 nc q gd gate to drain ?miller? charge 5.6 nc v sd source to drain diode forward voltage v gs = 0 v, i s = 2.1 a (note 2) 0.74 1.2 v v gs = 0 v, i s = 14 a (note 2) 0.83 1.3 t rr reverse recovery time i f = 14 a, di/dt = 100 a/ s 37 60 ns q rr reverse recovery charge 21 35 nc t rr reverse recovery time i f = 14 a, di/dt = 300 a/ s 31 49 ns q rr reverse recovery charge 40 64 nc notes : 1. r ja is determined with the device mounted on a 1 in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of fr-4 material. r jc is guaranteed by design while r ca is determined by the user's board design. 2. pulse test: pulse width < 300 s, duty cycle < 2.0%. 3. e as of 86 mj is based on starting t j = 25 c, l = 0.3 mh, i as = 24 a, v dd = 54 v, v gs = 10 v. a) 50 c/w when mounted on a 1 in 2 pad of 2 oz copper b) 125 c/w when mounted on a minimum pad of 2 oz copper.
FDMS86520 n-channel powertrench ? mosfet www.fairchildsemi.com 3 ?2012 fairchild semiconductor corporation FDMS86520 rev. c1 typical characteristics t j = 25 c unless otherwise noted figure 1. 012345 0 20 40 60 80 v gs = 8 v v gs = 6 v v gs = 10 v v gs = 6.5 v v gs = 7 v v gs = 5.5 v pulse duration = 80 p s duty cycle = 0.5% max i d , drain current (a) v ds , drain to source voltage (v) on-region characteristics figure 2. 0 20406080 0 1 2 3 4 5 6 v gs = 8 v v gs = 6.5 v pulse duration = 80 p s duty cycle = 0.5% max normalized drain to source on-resistance i d , drain current (a) v gs = 6 v v gs = 5.5 v v gs = 7 v v gs = 10 v n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n - r e s i s t a n c e -75 -50 -25 0 25 50 75 100 125 150 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 i d = 14 a v gs = 10 v normalized drain to source on-resistance t j , junction temperature ( o c ) vs junction temperature figure 4. 5678910 0 10 20 30 40 t j = 125 o c i d = 14 a t j = 25 o c v gs , gate to source voltage (v) r ds(on) , drain to source on-resistance ( m : ) pulse duration = 80 p s duty cycle = 0.5% max o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics 2345678 0 20 40 60 80 t j = 25 o c t j = 150 o c v ds = 5 v pulse duration = 80 p s duty cycle = 0.5% max t j = -55 o c i d , drain current (a) v gs , gate to source voltage (v) figure 6. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0.01 0.1 1 10 100 t j = -55 o c t j = 25 o c t j = 150 o c v gs = 0 v i s , reverse drain current (a) v sd , body diode forward voltage (v) s o u r c e t o d r a i n d i o d e forward voltage vs source current
FDMS86520 n-channel powertrench ? mosfet www.fairchildsemi.com 4 ?2012 fairchild semiconductor corporation FDMS86520 rev. c1 figure 7. 0 5 10 15 20 25 30 0 2 4 6 8 10 i d = 14 a v dd = 20 v v dd = 30 v v gs , gate to source voltage (v) q g , gate charge (nc) v dd = 40 v gate charge characteristics figure 8. 0.1 1 10 60 1 10 100 1000 10000 f = 1 mhz v gs = 0 v capacitance (pf) v ds , drain to source voltage (v) c rss c oss c iss c a p a c i t a n c e v s d r a i n to source voltage figure 9. 0.001 0.01 0.1 1 10 100 1 10 100 t j = 100 o c t j = 25 o c t j = 125 o c t av , time in avalanche (ms) i as , avalanche current (a) u n c l a m p e d i n d u c t i v e switching capability figure 10. 25 50 75 100 125 150 0 20 40 60 80 limited by package v gs = 8 v r t jc = 1.8 o c/w v gs = 10 v i d , drain current (a) t c , case temperature ( o c ) m a x i m u m c o n t i n u o u s d r a i n current vs case temperature figure 11. 0.01 0.1 1 10 100 300 0.01 0.1 1 10 100 100 p s 10 s 10 ms dc 1 s 100 ms 1 ms i d , drain current (a) v ds , drain to source voltage (v) this area is limited by r ds(on) single pulse t j = max rated r t ja = 125 o c/w t a = 25 o c fo rw ard bi as safe operating area f i g u r e 1 2 . s i n g l e p u l s e m a x i m u m po wer dissipation 10 -4 10 -3 10 -2 10 -1 110 100 1000 0.5 1 10 100 1000 2000 single pulse r t ja = 125 o c/w t a = 25 o c p ( pk ) , peak transient power (w) t, pulse width (sec) typical characteristics t j = 25 c unless otherwise noted
FDMS86520 n-channel powertrench ? mosfet www.fairchildsemi.com 5 ?2012 fairchild semiconductor corporation FDMS86520 rev. c1 figure 13. junction-to-ambient transient thermal response curve 10 -4 10 -3 10 -2 10 -1 11 0 100 1000 0.0005 0.001 0.01 0.1 1 2 single pulse r t ja = 125 o c/w duty cycle-descending order normalized thermal impedance, z t ja t, rectangular pulse duration (sec) d = 0.5 0.2 0.1 0.05 0.02 0.01 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t ja x r t ja + t a typical characteristics t j = 25 c unless otherwise noted
FDMS86520 n-channel powertrench ? mosfet www.fairchildsemi.com 6 ?2012 fairchild semiconductor corporation FDMS86520 rev. c1 dimensional outlin e and pad layout
7 www.fairchildsemi.com FDMS86520 n-channel powertrench ? mosfet ?2012 fairchild semiconductor corporation FDMS86520 rev. c1 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairch ild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairchild does not assume an y liability arising out of th e application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s wo rldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized fo r use as critical components in life support devices or systems without the express written approval of fai rchild semiconductor corporation. as used here in: 1. life support devices or systems ar e devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms 2cool? 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